NTH4L032N065M3S SiC MOSFET
• Typical RDS(ON) = 32 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 55 nC)
• High Speed Switching with Low Capacitance (Coss = 114 pF)
• 100% Avalan.
• SMPS, Solar Inverters, UPS, Energy Storage, EV Charging
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MAXIMUM RATINGS (TJ = 25°C unless otherwis.
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